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oH V SC AV ER OM AI SIO PL LA N IA BL S NT E
TISP1072F3,TISP1082F3 DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP1xxxF3 Overvoltage Protector Series
Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
DEVICE `1072F3 `1082F3 VDRM V - 58 - 66 V(BO) V - 72 - 82
D Package (Top View)
T NC NC R
1 2 3 4
8 7 6 5
G G G G
NC - No internal connection
Planar Passivated Junctions Low Off-State Current <10 A Rated for International Surge Wave Shapes
Waveshape 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21 FCC Part 68 FCC Part 68 GR-1089-CORE ITSP A 80 70 60 50
SL Package (Top View)
T G R
1 2 3
MD1XAB
Device Symbol
45 35
T R
.......................................UL Recognized Component Description These dual forward-conducting unidirectional over-voltage protectors are designed for the overvoltage protection of ICs used for the SLIC (Subscriber Line Interface Circuit) function. The IC line driver section is typically powered with 0 V and a negative supply. The TISP1xxxF3 limits voltages that exceed these supply rails and is offered in two voltage variants to match typical negative supply voltage values. High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. How To Order
For Standard Termination Finish Order As TISP1xxxF3DR TISP1xxxF3SL For Lead Free Termination Finish Order As TISP1xxxF3DR-S TISP1xxxF3SL-S
SD1XAA
G Terminals T, R and G correspond to the alternative line designators of A, B and C
Device
Package D, Small-outline
Carrier Tape And Reeled Tube
TISP1xxxF3 SL, Single-in-line
Insert xxx value corresponding to protection voltages of 072 and 082
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Description (continued) High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating Repetitive peak off-state voltage, 0 C < TA < 70 C Non-repetitive peak on-state pulse current (see Notes 1 and 2) 1/2 (Gas tube differential transient, 1/2 voltage wave shape) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 resistor) 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 10/160 (FCC Part 68, 10/160 voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 10/560 (FCC Part 68, 10/560 voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) Non-repetitive peak on-state current, 0 C < TA < 70 C (see Notes 1 and 3) 50 Hz, 1 s D Package SL Package IPPSM 120 80 50 70 60 55 38 50 50 45 35 4.3 7.1 250 -65 to +150 -65 to +150 A `1072F3 `1082F3 Symbol VDRM Value -58 -66 Unit V
ITSM diT/dt TJ Tstg
A A/s C C
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A Junction temperature Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section. 2. Initially the TISP(R) must be in thermal equilibrium with 0 C < TJ <70 C. The surge may be repeated after the TISP(R) returns to its initial conditions. 3. Above 70 C, derate linearly to zero at 150 C lead temperature.
Electrical Characteristics for R and T Terminal Pair, TA = 25 C (Unless Otherwise Noted)
Parameter Repetitive peak offstate current Off-state current Off-state capacitance Test Conditions VD = VDRM, 0 C < TA < 70 C VD = 50 V f = 100 kHz, Vd = 100 mV VD = 0 (see Note 4) D Package SL Package 0.08 0.02 Min Typ Max 10 10 0.5 0.3 Unit A A pF
IDRM ID Coff NOTE
4: Further details on capacitance are given in the Applications Information section.
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Electrical Characteristics for T and G or R and G Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter Repetitive peak offstate current Breakover voltage Impulse breakover voltage Breakover current Peak forward recovery voltage On-state voltage On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current Test Conditions VD = VDRM, 0 C < TA < 70 C dv/dt = -250 V/ms, RSOURCE = 300 dv/dt -1000 V/s, Linear voltage ramp, Maximum ramp value = -500 V RSOURCE = 50 dv/dt = -250 V/ms, RSOURCE = 300 dv/dt +1000 V/s, Linear voltage ramp, Maximum ramp value = +500 V RSOURCE = 50 IT = -5 A,t W = 100 s IT = +5 A,t W = 100 s IT = -5 A,d i/dt = +30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = -50 V f = 1 MHz, Vd = 0.1 Vr .m.s.,V D = 0 f = 1 MHz, Vd = 0.1 Vr .m.s.,V D = -5 V `1072F3 `1082F3 `1072F3 `1082F3 -0.1 `1072F3 `1082F3 3.3 3.3 -3 +3 -0.15 -5 -10 240 240 104 104 48 48 -78 -92 -0.6 Min Typ Max -10 -72 -82 Unit A V
IDRM V(BO) V(BO) I(BO) VFRM VT VF IH dv/dt ID
V A V V V A kV/s A
Coff
Off-state capacitance
f = 1 MHz, Vd = 0.1 Vr .m.s.,V D = -50 V (see Note 4) NOTE 5: Further details on capacitance are given in the Applications Information section.
`1072F3 `1082F3 `1072F3 `1082F3 `1072F3 `1082F3
150 130 65 55 30 25
pF
Thermal Characteristics
Parameter Test Conditions Ptot = 0.8 W, TA = 25 C 5 cm2, FR4 PCB D Package SL Package Min Typ Max 160 135 C/W Unit
R JA
Junction to free air thermal resistance
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Parameter Measurement Information
+i ITSP Quadrant I Forward Conduction Characteristic
ITSM IF VF
V(BR)M -v I(BR) V(BR) I(BO) IH VT IT ITSM Quadrant III Switching Characteristic ITSP -i
PMXXAC
VDRM IDRM
VD ID
+v
V(BO)
Figure 1. Voltage-current Characteristic for Terminals R and G or T and G
+i ITSP Quadrant I Switching Characteristic
ITSM IT VT IH V(BR)M -v I(BR) V(BR) I(BO) IH VT IT ITSM Quadrant III Switching Characteristic ITSP -i
PMXXAA
V(BO)
I(BO) IDRM V(BR) I(BR) VDRM V(BR)M +v
VDRM IDRM
VD
ID ID VD
V(BO)
Figure 2. Voltage-current Characteristic for Terminals R and T
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
OFF-STATE CURRENT vs JUNCTION TEMPERATURE BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE
100 VD = -50 V 10
TC1LAF
TC1LAL
I(BR) = 1 mA Negative Breakdown Voltages - V 80.0 V(BO)
'1082F3
1
70.0
V(BR)M
V(BR) '1072F3 V(BO)
0.1
0.01
60.0
V(BR) V(BR)M
0.001 -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C TJ - Junction Temperature - C
Figure 3.
Figure 4.
100
OFF-STATE CURRENT vs ON-STATE VOLTAGE
TC1LAC
FORWARD CURRENT vs FORWARD VOLTAGE
100
TC1LAE
25 C
IF - Forward Current - A
150 C 40 C
10
10
25 C 150 C 1 1 2 3 4 5 6 7 8 9 10 VT - On-State Voltage - V -40 C
1 1 2 3 4 5 6 7 8 9 10 VF - Forward Voltage - V
Figure 5.
Figure 6.
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE TC1LAD NORMALIZED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT
IH, I(BO) - Holding Current, Breakover Current - A
Normalized Breakover Voltage
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3
2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2
TC1LAG
I(BO)
IH 0.2
0.1 0.09 0.08 0.07 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
1.1 1.0 0.001 0.01 0.1 1 10 100
di/dt - Rate of Rise of Principle Current - A/s
Figure 7.
Figure 8.
10.0 VFRM - Peak Forward Recovery Voltage - V 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
PEAK FORWARD RECOVERY VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT
TC1LAH
200
OFF-STATE CAPACITANCE vs R OR T TERMINAL VOLTAGE (NEGATIVE)
TC1LAJ
Third Terminal = 0 to -50 V
Off-State Capacitance - pF
100 '1072F3 '1082F3
0.0 0.001
0.01
0.1
1
10
100
10 0*1
1
10
50
di/dt - Rate of Rise of Principle Current - A/s
R or T Terminal Voltage (Negative) - V
Figure 9.
Figure 10.
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
OFF-STATE CAPACITANCE vs R OR T TERMINAL VOLTAGE (POSITIVE) OFF-STATE CAPACITANCE vs JUNCTION TEMPERATURE
200 Third Terminal = 0 to -50 V
TC1LAK
500 Third Terminal = 0 to -50 V
TC1LAB
Terminal Bias = 0 Off-State Capacitance - pF '1072F3 150 '1082F3 Off-State Capacitance - pF '1072F3 100 '1082F3
'1072F3 '1082F3
Terminal Bias = -50 V
100 0.01
0.1 R or T Terminal Voltage (Positive) - V
0.3
10 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Figure 11.
Figure 12.
SURGE CURRENT vs DECAY TIME
1000
TC1LAA
Maximum Surge Current - A
100
10 2 10 100 Decay Time - s 1000
Figure 13.
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and T Terminals
OFF-STATE CURRENT vs JUNCTION TEMPERATURE BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE
100 VD = 50 V 10 ID - Off-State Current - A
TC1LAN
90.0
TC1LAM
I(BR) = 1 mA V(BO)
Breakdown Voltages - V
80.0
1
'1082F3 V(BR)M
V(BR)
0.1
V(BO) 70.0 '1072F3 V(BR)M V(BR)
0.01
0.001 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
60.0 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Figure 14.
Figure 15.
IH, I(BO) - Holding Current, Breakover Current - A
Normalized Breakover Voltage
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3
HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE TC1LAO
2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2
NORMALIZED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT
TC1LAI
I(BO)
IH 0.2
0.1 0.09 0.08 0.07 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
1.1 1.0 0.001 0.01 0.1 1 10 100
di/dt - Rate of Rise of Principle Current - A/s
Figure 16.
Figure 17.
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Typical Characteristics - R and T Terminals
OFF-STATE CAPACITANCE vs TERMINAL VOLTAGE
100 90 80 70 Off-State Capacitance - pF 60 50 40 30 SL Package 20 VG > VR or VT Both Voltage Polarities 10 0*1 1 Terminal Voltage - V Figure 18. 10 50 D Package
TC1LAPa
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
Thermal Information
MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION
TI1LAAa
THERMAL RESPONSE
TI1MAAa
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
ZJ - Transient Thermal Impedance - C/W
VGEN = 250 Vrms RGEN = 10 to 150 10 SL Package
100
D Package
10
SL Package
D Package 1 0*1
1
10
100
1000
1 0*0001 0*001
0*01
0*1
1
10
100
1000
t - Current Duration - s
t - Power Pulse Duration - s Figure 20.
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
APPLICATIONS INFORMATION Electrical Characteristics The electrical characteristics of a TISP device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters' temperature coefficient, the power dissipated and the thermal response curve, Z (see M. J. Maytum, "Transient Suppressor Dynamic Parameters." TI Technical Journal, vol. 6, No. 4, pp.63-70, July-August 1989). Lightning Surge Wave Shape Notation Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50% of the maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50 A, 5/310 s wave shape would have a peak current value of 50 A, a rise time of 5 s and a decay time of 310 s. The TISP surge current graph comprehends the wave shapes of commonly used surges. Generators There are three categories of surge generator types, single wave shape, combination wave shape and circuit defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 s open circuit voltage and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 s open circuit voltage and 8/20 s short circuit current). Circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 s open circuit voltage generator typically produces a 5/310 s short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape produced is intermediate between the open circuit and short circuit values. Current Rating When the TISP device switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP surge capability. As an example, the ITU-T K.21 1.5 kV, 10/700 s open circuit voltage surge is changed to a 38 A, 5/310 s current waveshape when driving into a short circuit. Thus, the TISP surge current capability, when directly connected to the generator, will be found for the ITUT K.21 waveform at 310 s on the surge graph and not 700 s. Some common short circuit equivalents are tabulated below:
Standard Open Circuit Voltage Short Circuit Current ITU-T K.21 1.5 kV, 10/700 s 37.5 A, 5/310 s ITU-T K.20 1 kV, 10/700 s 25 A, 5/310 s IEC 61000-4-5, combination wave generator 1.0 kV, 1.2/50 s 500 A, 8/20 s Telcordia GR-1089-CORE 1.0 kV, 10/1000 s 100 A, 10/1000 s Telcordia GR-1089-CORE 2.5 kV, 2/10 s 500 A, 2/10 s FCC Part 68, Type A 1.5 kV, <10/>160 s 200 A,<10/>160 s FCC Part 68, Type A 800 V, <10/>560 s 100 A,<10/>160 s FCC Part 68, Type B 1.5 kV, 9/720 s 37.5 A, 5/320 s
Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators' short circuit value. A 1 kV open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 (1000/100). If the equipment has a series resistance of 25 then the surge current requirement of the TISP device becomes 29 A (1000/35) and not 100 A.
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
APPLICATIONS INFORMATION Protection Voltage The protection voltage, (V(BO)), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the rate of current rise, di/dt, when the TISP device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge's di/dt (Figure 8.). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. As an example, the ITU-T K.21 1.5 kV, 10/700 s surge has an average dv/dt of 150 V/s, but, as the rise is exponential, the initial dv/dt is higher, being in the region of 450 V/s. The instantaneous generator output resistance is 25 . If the equipment has an additional series resistance of 20 , the total series resistance becomes 45 . The maximum di/dt then can be estimated as 450/45 = 10 A/s. In practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP device breakdown region.
Capacitance Off-state Capacitance The off-state capacitance of a TISP device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage, VD, and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 C variation of capacitance value with a.c. bias is shown in Figure 21. When VD>> Vd, the capacitance value is independent on the value of Vd. The capacitance is essentially constant over the range of normal telecommunication frequencies.
1.05 1.00 Normalized Capacitance 0.95 0.90 0.85 0.80 0.75 0.70 1
NORMALIZED CAPACITANCE vs RMS AC TEST VOLTAGE
AIXXAA
Normalized to Vd = 100 mV DC Bias, VD = 0 10 100 1000
Vd - RMS AC Test Voltage - mV
Figure 21.
SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxF3 Overvoltage Protector Series
APPLICATIONS INFORMATION Longitudinal Balance Figure 22 shows a three terminal TISP device with its equivalent "delta" capacitance. Each capacitance, CTG, CRG and CTR, is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T, then CTG >CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The line capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2. All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included.
T
T (CTG-CRG) CTG CRG Equipment CTR CRG CRG R CTG > CRG Equivalent Unbalance
AIXXAB
G
G CTR
Equipment
R
Figure 22.
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. SEPTEMBER 1993 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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